Influence of stacking disorder on the photoconductivity of GaSe

Abstract

The anisotropy of the photocurrent as a function of photon energy has been measured in the range of the fundamental gap of GaSe. A high, temperature-sensitive, anisotropy of the photocurrent is observed for light energies slightly higher than the gap. The results give independent evidence for the disorder-induced localisation of the electronic states along the crystallographic c axis and confirm the interpretation of the DC and drift conductivity properties of this material.