Influence of stacking disorder on the dc conductivity of layered semiconductors

Abstract

The stacking disorder present in many layer materials leads to a localization of the electronic states along the layer normal. It is shown that the anisotropy of the dc conductivity can be calculated in terms of a one-dimensional hopping model. Numerical results are given for the dependence of the anisotropy, both on the concentration of the stacking faults and on the perturbation produced by a single stacking fault. The experimental anisotropy of GaSe is discussed in terms of the presented model.