H. Overhof

Negatively charged Si vacancy in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>SiC: A comparison between theory and experiment

T. Wimbauer, Bertrand Meyer, A. Hofstaetter et al. · Physical review. B, Condensed matter · 1997 · 181 citations

Engineering, Nuclear Physics, Magnetic Resonance +19

Pressure dependence of the optical properties and the band structure of the copper and silver halides

S. Ves, D. Glötzel, M. Cardona et al. · Physical review. B, Condensed matter · 1981 · 173 citations

Optical Materials, Engineering, Chemistry +21

A model for the electronic transport in hydrogenated amorphous silicon

H. Overhof, W. Beyer · Philosophical Magazine B · 1981 · 170 citations

Electronic transport in hydrogenated amorphous silicon

H. Overhof, W. Beyer · Philosophical Magazine B · 1983 · 123 citations

Electrical Engineering, Engineering, Physics +14

Thermopower calculation for variable range hopping — application to α‐Si

H. Overhof · physica status solidi (b) · 1975 · 99 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14