Coulomb Blockade Conditions for Detailed Model of Single-Electron Turnstile Device Including Finite Self-Capacitances of Island Electrodes

Abstract

We propose a detailed model of a single-electron turnstile device in which each island electrode has a finite self-capacitance. The Coulomb blockade (CB) regions are obtained by calculating the free energy of the system, and are graphically presented in the gate-charge versus bias-voltage plane. We confirm the CB regions obtained to be octagonal, instead of the quadrilateral CB regions obtained in the conventional model.