Physical Review Letters · 1990 · 598 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingElectric CircuitsHigh-frequency Semiconductor DevicesNanoelectronicsQuantum TunnelingSemiconductor PhysicsCoulomb BlockadeCoulomb Blockade TunnelingCurrent-voltage RelationsCurrent-voltage RelationshipElectron TunnelingTunnel JunctionsTunneling CurrentTunneling Phenomena
The device’s behavior is governed by Coulomb blockade theory of electron tunneling. The study examines the accuracy limits of the single‑electron turnstile. An array of ultrasmall tunnel junctions was fabricated that functions as a single‑electron turnstile, transferring one electron per cycle under an alternating gate voltage and producing a current plateau at I = ef.
We have fabricated an array of ultrasmall tunnel junctions which acts like a turnstile for single electrons. When alternating voltage of frequency f is applied to a gate, one electron is transferred per cycle through the device. This results in a current plateau in the current-voltage characteristic at I=ef. The overall behavior of the device is well explained by the theory of Coulomb blockade of electron tunneling. We discuss the accuracy limitations of this device.
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