Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition

Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors

P. M. Mooney · Journal of Applied Physics · 1990 · 866 citations

Engineering, Materials Science, Physics +17

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Akiko Gomyo, T. Suzuki, K. Kobayashi et al. · Applied Physics Letters · 1987 · 438 citations

Natural Sciences, Materials Science, Physics +17

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell

J. M. Olson, Sarah Kurtz, A. Kibbler et al. · Applied Physics Letters · 1990 · 310 citations

Engineering, Electrical Engineering, Materials Science +17

Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

D.H. Reep, S. K. Ghandhi · Journal of The Electrochemical Society · 1983 · 294 citations

Engineering, Materials Engineering, Materials Science +17

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy et al. · Applied Physics Letters · 1989 · 273 citations

Engineering, Materials Engineering, Materials Science +17