Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors

Sunho Jeong, Young‐Geun Ha, Jooho Moon et al. · Advanced Materials · 2009 · 543 citations

Engineering, Materials Engineering, Materials Science +17

Polysilicon TFT technology for active matrix OLED displays

Mark J. Stewart, Robert S. Howell, Luis Miguel Rego Pires et al. · IEEE Transactions on Electron Devices · 2001 · 323 citations

Engineering, Electrical Engineering, Materials Science +16

Novel ZrInZnO Thin‐film Transistor with Excellent Stability

Jin‐Seong Park, Kwang-Suk Kim, Yeon‐Gon Mo et al. · Advanced Materials · 2008 · 265 citations

Engineering, Materials Engineering, Materials Science +17

Electronic structure of the amorphous oxide semiconductor a‐InGaZnO_4–<i>x</i>: Tauc–Lorentz optical model and origins of subgap states

Toshio Kamiya, Kenji Nomura, Hideo Hosono · physica status solidi (a) · 2009 · 241 citations

Natural Sciences, Materials Engineering, Materials Science +17

Amorphous IZO-based transparent thin film transistors

David C. Paine, Burağ Yağlıoğlu, Zach M. Beiley et al. · Thin Solid Films · 2007 · 235 citations

Engineering, Electrical Engineering, Materials Science +10