Beryllium and sulfur ion-implanted profiles in gaas

Soviet Physics—Solid State

Nature · 1959 · 1.8K citations · Full text

The physics of semiconductor devices

R. H. Rediker · Solid-State Electronics · 1970 · 1.6K citations

Engineering, Materials Science, Physics +12

Depth distribution of energy deposition by ion bombardment

Irwin Manning, George P. Mueller · Computer Physics Communications · 1974 · 332 citations

Engineering, Nuclear Engineering, Plasma Physics +8

Secondary ion emission for surface and in-depth analysis of tantalum thin films

J.M. Morabito, Ruthan Lewis · Analytical Chemistry · 1973 · 59 citations

Natural Sciences, Chemistry, Materials Science +9

Electrical properties of Cd, Zn and S ion-implanted layers in GaAs

Robert G. Hunsperger, O. J. Marsh · Radiation Effects · 1970 · 34 citations

Engineering, Materials Engineering, Materials Science +17