Journal of Applied Physics · 1982 · 49 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor ReliabilitySemiconductor SurfacesDeep-level DefectsDefect PassivationHydrogen PassivationPassivation MechanismsPassivation Of SemiconductorsPassivation TechniquesPolycrystalline SemiconductorsTransient Current Spectroscopy
The passivation of a bulk donor defect (Ec –0.36 eV) in polycrystalline GaAs by reaction with atomic hydrogen has been observed using deep level transient spectroscopy. The concentration profile of the defect is presented as a function of the duration and temperature of the exposure to atomic hydrogen—when exposed for 3 h at 250 °C, 3×1015 donor defects cm−3 were passivated to a depth of ∼1.1 μm.
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Substitutional doping of amorphous silicon
P. G. Le Comber · Solid State Communications · 1975 · 1.1K citations
Hydrogen passivation of point defects in silicon
J. L. Benton, C. J. Doherty, S. D. Ferris et al. · Applied Physics Letters · 1980 · 174 citations