Concepedia

Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy

K. Amimer, A. Georgakilas, M. Androulidaki, K. Tsagaraki, M. Pavelescu, S. Mikroulis, G. Constantinidis, Jordi Arbiol, F. Peiró, A. Cornet,

Materials Science and Engineering B · 2001 · 10 citations · 8 references

DOI

Concepts

References

8

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

, , +17

III–nitrides: Growth, characterization, and properties

S.C. Jain, M. Willander, J. Narayan et al. · Journal of Applied Physics · 2000 · 1.3K citations

, , +17

First-Order Raman Effect in Wurtzite-Type Crystals

Carlos Argüello, Denis L. Rousseau, S. P. S. Porto · Physical Review · 1969 · 1K citations

, , +15

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa, B. Heying, Xuemei Wu et al. · Journal of Applied Physics · 1997 · 404 citations

, , +17

Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk et al. · Journal of Applied Physics · 1997 · 376 citations

, , +17