Applied Physics Letters · 1997 · 28 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsDopingOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsSemiconductor PhysicsWide Band Gap SemiconductorsCarrier LifetimeImpuritiesMany-body CorrelationsMany-body EffectsPhotoluminescenceQuantum Dot PhotophysicsSemiconductor Quantum DotsTime-resolved Photoluminescence Spectroscopy
The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.
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Linewidth dependence of radiative exciton lifetimes in quantum wells
Jochen Feldmann, G. Peter, E. O. Göbel et al. · Physical Review Letters · 1987 · 1.1K citations