Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films

Abstract

Single crystalline AlSb films are successfully grown, by MBE on GaAs substrates at temperatures higher than 400 °C. The surface gives a C(2 × 6) structure under Sb stabilized conditions. Undoped AlSb is p-type with resistivities of 102 to 103Ωcm. Then, GaSb films are grown on AlSb/GaAs. It can be seen, from RHEED observation that the interface between AlSb and GaSb is very smooth, and the layer growth continues at the interface. Fabricating that structure improves the properties of GaSb in comparison with those of GaSb directly grown on GaAs by the relaxation of lattice mismatch.