Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy

Unusual properties of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Optical bandgap energy of wurtzite InN

Takashi Matsuoka, Hiroshi Okamoto, Masashi Nakao et al. · Applied Physics Letters · 2002 · 728 citations · Full text

Natural Sciences, Materials Science, Physics +17

Epitaxially grown AlN and its optical band gap

Woosoon Yim, E. J. Stofko, P. J. Zanzucchi et al. · Journal of Applied Physics · 1973 · 600 citations

Natural Sciences, Materials Engineering, Materials Science +17

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi · Japanese Journal of Applied Physics · 2003 · 419 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

Akihiko Kikuchi, Mizue Kawai, M. di Tada et al. · Japanese Journal of Applied Physics · 2004 · 379 citations

Engineering, Electrical Engineering, Materials Science +13