Electronics Letters · 1988 · 29 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesBipolar Junction TransistorsPhotodetectorsHeterojunction Bipolar TransistorsHeterojunction PhotodetectorsIntegrated PhotodetectorsPhotodiode CircuitsPhotodiodesReceiver SensitivityReceiver Sensitivity Analysis
We report the first integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal photo-transistor, three bipolar transistors and three resistors. A receiver sensitivity of −26 dBm at 100 Mbit/s has been achieved.
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Small-area high-speed InP/InGaAs phototransistor
Joe C. Campbell, C.A. Burrus, A.G. Dentai et al. · Applied Physics Letters · 1981 · 47 citations
High-speed InGaAs(P)/InP double-heterostructure bipolar transistors
R.N. Nottenburg, J.C. Bischoff, M. B. Panish et al. · IEEE Electron Device Letters · 1987 · 44 citations