MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures

Molecular beam epitaxy growth of GaAs1−xBix

S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 451 citations

Materials Science, Semiconductors, Gaas 1−X +11

Band gap of GaAs1−xBix, 0<x<3.6%

S. Francoeur, M. J. Seong, A. Mascarenhas et al. · Applied Physics Letters · 2003 · 426 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

First‐principles study on elastic properties and phase stability of III–V compounds

Shaoqing Wang, H. Q. Ye · physica status solidi (b) · 2003 · 328 citations

Boron Phases, Engineering, Solid-state Chemistry +16

Valence band anticrossing in GaBixAs1−x

Kirstin Alberi, O. D. Dubón, W. Walukiewicz et al. · Applied Physics Letters · 2007 · 315 citations

Optical Materials, Engineering, Gaas Valence Band +19

New Semiconductor Alloy GaAs_1-xBi_x Grown by Metal Organic Vapor Phase Epitaxy

Kunishige Oe, Hiroshi Okamoto · Japanese Journal of Applied Physics · 1998 · 214 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +13