Reactive ion etching of silicon

Abstract

Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed. For use in chlorinated plasmas, there is a choice of nonerodible masks that sputter slowly but will not be redeposited on the substrate surface. Both CCl4/Ar and Cl2/Ar plasmas will be described. The variation in etch rate of silicon with rf power, frequency, reactant concentration, reactant flow rate, gas presure, crystal orientation, and batch size will be presented. The possibilities of polymer formation and surface roughening will be discussed.