Applied Physics Letters · 2005 · 14 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAmorphous SemiconductorsNanoporous MaterialsPorous MaterialsSemiconductor Thin FilmsSilicon MaterialsThin Film Electrical PropertiesAmorphous SiliconAnnealingElectrical PropertiesPoresPorous SiliconSilicon Thin FilmsThermal AnnealingThermal Annealing Effects
Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al–Si target and subsequent removal of the deposited film’s Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016pores∕m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p-type semiconductors, are very similar to those of electrochemically etched porous Si.
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A Porous Silicon-Based Optical Interferometric Biosensor
Victor S.‐Y. Lin, Kianoush Motesharei, Keiki-Pua S. Dancil et al. · Science · 1997 · 1.3K citations