Giant carrier mobility in single crystals of FeSb2

Abstract

We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ∼105cm2∕Vs at 8K and are ∼102cm2∕Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.