Effect of Ti doping concentration on resistive switching behaviors of Yb₂O₃ memory cell

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Somnath Mondal, Hung-Yu Chen, Jim-Long Her, Fu-Hsiang Ko, Tung-Ming Pan; Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell. Appl. Phys. Lett. 20 August 2012; 101 (8): 083506. https://doi.org/10.1063/1.4747695 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search