Concepedia

Growth temperature dependences of InN films grown by MOCVD

Cuibai Yang, Xiaoliang Wang, Hongling Xiao, Xiaobin Zhang, Guoxin Hu, Junxue Ran, Cuimei Wang, Jianping Li, Jinmin Li, Zhanguo Wang

Applied Surface Science · 2008 · 21 citations · 13 references

DOI

Concepts

References

13

Unusual properties of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text

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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan et al. · physica status solidi (b) · 2002 · 986 citations

, , +14

Progress and prospects of group-III nitride semiconductors

S. Noor Mohammad, H. Morkoç̌ · Progress in Quantum Electronics · 1996 · 500 citations

, , +12

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Rosa Chierchia, T. Böttcher, H. Heinke et al. · Journal of Applied Physics · 2003 · 391 citations

, , +17

Improvement on epitaxial grown of InN by migration enhanced epitaxy

H. J. Lü, W. J. Schaff, Jeonghyun Hwang et al. · Applied Physics Letters · 2000 · 205 citations

, , +17