A leed-aes study of thin Pd films on Si(111) and (100) substrates

Implanted noble gas atoms as diffusion markers in silicide formation

S.S. Lau, J. W. Mayer, Helmut Müller et al. · Thin Solid Films · 1975 · 266 citations

Natural Sciences, Materials Engineering, Materials Science +5

Growth Kinetics Observed in the Formation of Metal Silicides on Silicon

R.W. Bower, J. W. Mayer · Applied Physics Letters · 1972 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Application of Auger electron spectroscopy to studies of the silicon/silicide interface

J. A. Roth, C.R. Crowell · Journal of Vacuum Science and Technology · 1978 · 126 citations

Natural Sciences, Chemistry, Materials Science +17

The growth and transformation of Pd2Si on (111), (110) and (100) Si

Gudrun A. Hutchins, A. Shepela · Thin Solid Films · 1973 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +9

Microscopic Compound Formation at the Pd-Si(111) Interface

J. L. Freeouf, Gary W. Rubloff, P Shing Ho et al. · Physical Review Letters · 1979 · 122 citations

Natural Sciences, Chemistry, Physics +17