A study of near-infrared nanosecond laser ablation of silicon carbide

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

M. Roschke, Frank Schwierz · IEEE Transactions on Electron Devices · 2001 · 353 citations

Engineering, Electrical Engineering, Materials Science +17

Explosive change in crater properties during high power nanosecond laser ablation of silicon

Jae‐Hyuck Yoo, Sungho Jeong, R. Greif et al. · Journal of Applied Physics · 2000 · 297 citations

Natural Sciences, Materials Engineering, Materials Science +15

Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication

Ben Pecholt, Monica Vendan, Yuanyuan Dong et al. · The International Journal of Advanced Manufacturing Technology · 2007 · 94 citations

Engineering, Materials Engineering, Materials Science +13

Calculated temperature distribution during laser annealing in silicon and cadmium telluride

R. O. Bell, M. Toulemonde, P. Siffert · Applied Physics A · 1979 · 91 citations

Engineering, Materials Engineering, Materials Science +13

Fundamental investigations of micromachining by nano- and picosecond laser radiation

Juergen Jandeleit, Alexander Horn, R. Weichenhain et al. · Applied Surface Science · 1998 · 85 citations

Engineering, Manufacturing Engineering, Microfabrication +12