Atomic Force Microscope Nanolithography on SiO<sub> 2</sub>/Semiconductor Surfaces

Adrian Avramescu, Katsuhiro Uesugi, Ikuo Suemune Ikuo Suemune

Japanese Journal of Applied Physics · 1997 · 12 citations · 9 references

Concepts

Abstract

We report on the fabrication of a nanometer-scale SiO 2 mask on a semiconductor surface using an atomic force microscope (AFM). Layers of SiO 2 5–35 nm thick sputtered on GaAs substrates are covered with very thin polymethyl methacrylate (PMMA) films by spin-coating. The AFM tips were used mechanically to modify the polymer layers. Lines with 18-nm width and holes with 20-nm diameter were successfully patterned on the PMMA films. These patterns were transferred into the SiO 2 layers by wet etching in buffered HF. Linewidths as small as 40 nm have been obtained. Arrays of lines and holes with 200 nm periodicity were successfully fabricated.

References

9