Etching damage and its recovery in n-GaN by reactive ion etching

Optical properties of Si-doped GaN

E. Fred Schubert, I. D. Goepfert, W. Grieshaber et al. · Applied Physics Letters · 1997 · 214 citations

Engineering, Materials Science, Physics +17

Yellow luminescence and related deep levels in unintentionally doped GaN films

Ilan Shalish, Leeor Kronik, Gil Segal et al. · Physical review. B, Condensed matter · 1999 · 150 citations

Engineering, Materials Engineering, Materials Science +16

Dry etch damage in <i>n</i>-type GaN and its recovery by treatment with an N2 plasma

Ji-Myon Lee, Ki-Myung Chang, Sang‐Woo Kim et al. · Journal of Applied Physics · 2000 · 148 citations

Engineering, Electrical Engineering, Materials Science +17

Depth and thermal stability of dry etch damage in GaN Schottky diodes

X. A. Cao, H. Cho, S. J. Pearton et al. · Applied Physics Letters · 1999 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Plasma-induced damage to <i>n</i>-type GaN

H. W. Choi, S. J. Chua, A. Raman et al. · Applied Physics Letters · 2000 · 92 citations

Engineering, Materials Science, Physics +17