Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD

Defects associated with the accommodation of misfit between crystals

J. W. Matthews · Journal of Vacuum Science and Technology · 1975 · 697 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattice grown by molecular beam epitaxy

J. C. Bean, L. C. Feldman, A. T. Fiory et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 676 citations

Engineering, Materials Engineering, Materials Science +17

Defects in epitaxial multilayers

J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1976 · 594 citations

Natural Sciences, Materials Science, Physics +12

Relaxation of strained-layer semiconductor structures via plastic flow

Brian W. Dodson, Jeffrey Y. Tsao · Applied Physics Letters · 1987 · 552 citations

Natural Sciences, Materials Engineering, Materials Science +17

Strained-layer superlattices from lattice mismatched materials

G. C. Osbourn · Journal of Applied Physics · 1982 · 431 citations

Natural Sciences, Materials Science, Physics +17