Electronics Letters · 1995 · 48 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesImpedance MatchingMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsEncapsulationHigh-frequency ElectronicsImpatt DiodesImpedance Matching In Microwave CircuitsMicrowave Impedance MatchingOhmic LossesRadio-frequency DevicesSchottky Contacts
CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n+-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised.
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M.G. Adlerstein, S.L.G. Chu · IEEE Electron Device Letters · 1984 · 35 citations
GaAs Read-type IMPATT diodes for D-band
M. Tschernitz, J. Freyer, H. Grothe · Electronics Letters · 1994 · 15 citations