Applied Physics Letters · 1994 · 236 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsLuminescent MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsOptoelectronic MaterialsSemiconductor Device MaterialsSilicon MaterialsBand GapIndirect Band GapOptical Band GapPorous SiliconPorous Silicon CarbideSilicon CarbideSilicon Carbide (Sic) MaterialsSingle-crystal Silicon
Porous silicon carbide has been fabricated using single crystal 6H-SiC that has a wider indirect band gap than silicon crystal. Intense blue-green luminescence has been observed at room temperature. The peak wavelength is around 460 nm, below the band gap of crystalline SiC. The luminescence intensity is about 100 times stronger than that of crystalline 6H-SiC. These results not only clarify the origin of luminescence in porous Si but also point to the possibility of the use of this new material for an intense blue-green luminescent source.
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Porous silicon formation: A quantum wire effect
V. Lehmann, U. Gösele · Applied Physics Letters · 1991 · 1.9K citations
Natural Sciences, Materials Engineering, Materials Science +17
Yoshihiko Kanemitsu, Hiroshi Uto, Yasuaki Masumoto et al. · Physical review. B, Condensed matter · 1993 · 451 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Thermal treatment studies of the photoluminescence intensity of porous silicon
Chuen‐Jinn Tsai, K.-H. Li, J. Sarathy et al. · Applied Physics Letters · 1991 · 315 citations · Full text