Physical review. B, Condensed matter · 1993 · 451 citations · 25 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor MaterialsThin FilmsOptical Properties Of SemiconductorsPorous MaterialsRaman SpectroscopySemiconductor NanomaterialsSemiconductor PhysicsSilicon MaterialsAbsorption SpectraAbsorption SpectrumBand GapOptical AbsorptionOptical PropertiesPhotoluminescenceQuantum Confinement EffectsSilicon Thin Films
We have studied the microstructure and optical properties of free-standing porous Si thin films fabricated by electrochemical anodization. Raman-spectroscopy and transmission-electron-microscopy examinations show that Si crystallite spheres with diameters of several nanometers are dispersed in the amorphous phase. The blueshift of the optical-absorption spectrum is observed for decreasing average diameter of the Si crystallites. However, there is no clear size dependence of the peak energy of the broad photoluminescence (PL) spectrum. Spectroscopic analysis strongly suggests that the photogeneration of carriers occurs in the c-Si core, whose band gap is modified by the quantum-confinement effect, while the strong PL comes from the near-surface region of small crystallites.
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Porous silicon formation: A quantum wire effect
V. Lehmann, U. Gösele · Applied Physics Letters · 1991 · 1.9K citations
Natural Sciences, Materials Engineering, Materials Science +17