Materials science forum · 2003 · 10 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceCeramic MaterialsNanomaterialsNanotechnologyDevice SimulationSemiconductor InterfacesSemiconductor NanomaterialsSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsNanostructured SiliconSilicon CarbideSilicon Carbide Crystal Growth
Abstract: Silicon carbide nano-clusters have some promising specific properties for micro- and optoelectronics. In this work the SiC clusters formation and the growth on the silicon (111) surface during molecular beam epitaxy (MBE) have been investigated theoretically with implementation of the rate equations simulation model. The model was successfully applied to obtain the temperature dependence of the cluster concentration. The results were compared with the experimental data [1-3]. Furthermore, influence of the surface reconstruction transition (7x7) ® (1x1) on the temperature concentration dependence was investigated.
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Investigation of the nucleation and growth of SiC nanostructures on Si
F. Scharmann, P. Maslarski, W. Attenberger et al. · Thin Solid Films · 2000 · 21 citations
Chemical conversion of Si to SiC by solid source MBE and RTCVD
J. Pezoldt, V. Cimalla, Th. Stauden et al. · Diamond and Related Materials · 1997 · 17 citations