Concepedia

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Jun Jiao, Benedict Johnson, Suṗapan Seraphin, M.J. Anc, R. Dolan, B. Cordts

Materials Science and Engineering B · 2000 · 33 citations · 8 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesIon ImplantationOxide SemiconductorsSilicon MaterialsSurface PhysicsImplantation Through Thin FilmsOxide Growth KineticsOxide Layer EngineeringOxide Layer MorphologyThin Oxide FilmsThin Oxide Layers

References

8

Formation of stacking faults and enhanced diffusion in the oxidation of silicon

S. M. Hu · Journal of Applied Physics · 1974 · 435 citations

Engineering, Materials Engineering, Materials Science +17

Kinetics of phase transformations

Michael O. Thompson, Michael J. Aziz, G. B. Stephenson · 1992 · 91 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

Satοru Nakashima, T. Katayama, Yoshiji Miyamura et al. · Journal of The Electrochemical Society · 1996 · 65 citations

Engineering, Materials Engineering, Materials Science +17

1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS

1996 · 33 citations

Engineering, Computer Science, Electrical Engineering +5

The Effects of Dose and Target Temperature on Low Energy SIMOX Layers

Y. Li, John A. Kilner, R.J. Chater et al. · Journal of The Electrochemical Society · 1993 · 19 citations

Engineering, Materials Engineering, Materials Science +16