1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

Abstract

Very low threshold current densities of 640 A/cm 2 , 400 A/cm 2 and 200 A/cm 2 were obtained in 1.5 µm GaInAs/AlGaInAs lattice matched, compressive and tensile strained-layer quantum well laser diodes (SL-QW LDs) respectively, grown by organometallic chemical vapor deposition, with continuously graded-index separate-confinement-heterostructure. The polarization of output power for a tensile SL-QW LD showed transverse magnetic (TM) mode, while that for a lattice matched and a compressive SL-QW LDs showed transverse electric (TE) mode. A very low threshold current of 3.6 mA was obtained in a buried heterostructure compressive SL-QW laser diode grown by two-step organometallic chemical vapor deposition.