Kinetics of the epitaxial growth of GaN using Ga, HCl and NH3

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Engineering, Chemistry, Materials Science +12

Electrical properties of n-type vapor-grown gallium nitride

M. Ilegems, H. C. Montgomery · Journal of Physics and Chemistry of Solids · 1973 · 201 citations

Engineering, Materials Engineering, Materials Science +14

Mass Spectrometric Studies of Vapor-Phase Crystal Growth

Vladimir S. Ban · Journal of The Electrochemical Society · 1972 · 153 citations

Natural Sciences, Chemistry, Materials Science +13