Chloride VPE of Al_xGa_1-xAs by the Hydrogen Reduction Method Using a Metal Al Source

Abstract

VPE of AlGaAs by the chloride transport method using separate Al and Ga metals has been demonstrated for the first time. AsCl 3 instead of toxic AsH 3 was used as the arsenic source. Mirror-like surfaces with growth rates of 1–2 µm/hr were obtained. Background doping levels range in the order of 10 18 cm -3 , probably due to the reaction between AlCl 3 and the quartz reactor. Band-edge emissions were observed in the photoluminescence spectra.