Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on silicon

Toshiyuki Sakuma, Shintaro Yamamichi, S. Matsubara, +2

Applied Physics Letters

High-temperature AnnealingEngineeringThin Film Process TechnologySilicon On InsulatorSrtio3 Thin-film Capacitor +14

Structural and Electrical Characterization of SrTiO₃ Thin Films Prepared by Metal Organic Chemical Vapor Deposition

Hiromu Yamaguchi, Pierre‐Yves Lesaicherre, Toshiyuki Sakuma, +3

Japanese Journal of Applied Physics

Materials ScienceOxide HeterostructuresChemical EngineeringSemiconductorsEngineering +13

Reactive Coevaporation Synthesis and Characterization of SrTiO₃ Thin Films

Hiromu Yamaguchi, S. Matsubara, Yoichi Miyasaka

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringApplied ChemistryMaterial AnalysisEngineering +11

SrTiO₃ thin films by mocvd for 1 gbit DRAM application

Pierre‐Yves Lesaicherre, Hiromu Yamaguchi, Yoichi Miyasaka, +3

Integrated ferroelectrics

Thin Film PhysicsEngineeringEmerging Memory TechnologyThin Film Process TechnologyChemical Deposition +16

Chemical Vapor Deposition of  ( Ba , Sr ) TiO3

Masaji Yoshida, Hiromu Yamaguchi, Toshiyuki Sakuma, +3

Journal of The Electrochemical Society

Materials EngineeringMaterials ScienceChemical EngineeringSemiconductorsEngineering +12

Formation mechanism of interfacial Si–oxide layers during postannealing of Ta2O5/Si

Haruhiko Ono, Yumiko Hosokawa, Taeko Ikarashi, +4

Journal of Applied Physics

Materials ScienceMaterials EngineeringSemiconductorsFourier TransformEngineering +13

Low Temperature Deposition of (Ba, Sr)TiO₃ Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

S. Sone, Hisato Yabuta, Yoshitake Kato, +6

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceEngineeringTio 3Oxide Electronics +11

A gbit-scale dram stacked capacitor with ECR MOCVD SrTiO₃ over RIE patterned RuO₂/TiN storage nodes

Pierre‐Yves Lesaicherre, Shintaro Yamamichi, Koichi Takemura, +5

Integrated ferroelectrics

Materials ScienceOxide HeterostructuresElectrical EngineeringEpitaxial GrowthEngineering +13

Chloride VPE of Al_xGa_1-xAs by the Hydrogen Reduction Method Using a Metal Al Source

Fumio Hasegawa, Koji Katayama, Ryuji Kobayashi, +2

Japanese Journal of Applied Physics

Materials ScienceAluminium NitrideGaseous ReductionOptical MaterialsHydrogen Reduction Method +11

Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl₃ with AsH₃/H₂

Fumio Hasegawa, Hiromu Yamaguchi, Koji Katayama

Japanese Journal of Applied Physics

SemiconductorsMaterials EngineeringElectrical EngineeringEpitaxial GrowthEngineering +12