Japanese Journal of Applied Physics · 1991 · 52 citations · 2 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryThin FilmsDielectricsMetal OxidesThin Film AnnealingThin Film Electrical PropertiesThin-film DepositionThin-film MaterialsAnnealingDielectric ConstantDielectric Constant MeasurementIn Situ AnnealingThin Oxide FilmsThin Oxide LayersThin-film OxidesTitanium Oxides
SrTiO 3 thin films were prepared by the reactive coevaporation method, where the Ti and Sr metals were evaporated in oxygen ambient with an E-gun and K-cell, respectively. A uniform depth profile in composition was achieved by altering the Ti evaporation rate according to the Sr evaporation rate change. A typical dielectric constant of 170 was measured on films of 75 nm in thickness. The in-situ annealing in oxygen plasma reduced the leakage current.
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