Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes

Abstract

The relationship between stacking faults and the position of the leakage current inside a triangular defect was analyzed. Triangular defects are categorized into two types on the basis of the current–voltage ( I – V ) characteristics. It was found that stacking faults (SFs) of the 3C structure inside a triangular defect increase leakage current at a reverse bias voltage as well as forward current at a low bias voltage, while SFs of the SF(4,2) structure inside a triangular defect do not lead to deterioration of device performance in this case.