Thermal analysis of a Ag/Ti based microheater

Abstract

Abstract A thin film silver/titanium microheater with a four-point probe, double spiral geometry for MEMS applications was fabricated on a silica glass substrate. The active area of the microheater is 36×36 μm2. The temperature coefficient of resistance (TCR) of the sputtered Ti thin film resistor is 4.2×10−3/K. The average temperature of the microheater was extracted using the determined TCR. The result shows that an operating temperature of 333 K can be achieved with a mere 5 μA, that comes down to a power dissipation of 210 nW.