Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 376 citations

Engineering, Electrical Engineering, Materials Science +17

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Satoshi Watanabe, Norihide Yamada, Masakazu Nagashima et al. · Applied Physics Letters · 2003 · 290 citations

Natural Sciences, Materials Engineering, Materials Science +14

Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template

Dong‐Sing Wuu, W. K. Wang, K. S. Wen et al. · Applied Physics Letters · 2006 · 146 citations

Engineering, Materials Science, Physics +12

Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes

Dong‐Sing Wuu, W. K. Wang, K. S. Wen et al. · Journal of The Electrochemical Society · 2006 · 124 citations

Engineering, Materials Engineering, Materials Science +17

Nitride-based LEDs fabricated on patterned sapphire substrates

Shoou‐Jinn Chang, Y. C. Lin, Yan Su et al. · Solid-State Electronics · 2003 · 100 citations

Engineering, Electrical Engineering, Materials Science +14