Publication | Closed Access

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Electrical EngineeringSolid-state LightingEngineeringSapphire SubstratesApplied PhysicsNew Lighting TechnologyAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronicsGan-based Leds Grown