Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy

Damped oscillations in reflection high energy electron diffraction during GaAs MBE

J. M. Van Hove, Craig S. Lent, Paul Pukite et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 359 citations

Natural Sciences, Materials Science, Physics +17

Theory of polar semiconductor surfaces

Walter A. Harrison · Journal of Vacuum Science and Technology · 1979 · 294 citations

Natural Sciences, Materials Science, Physics +17

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

W. I. Wang · Applied Physics Letters · 1984 · 249 citations

Engineering, Materials Engineering, Materials Science +17

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer, W. T. Masselink, John F. Klem et al. · Journal of Applied Physics · 1985 · 194 citations

Engineering, Electrical Engineering, Materials Science +16

On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

H. Kroemer, K. J. Polasko, Steve C. Wright · Applied Physics Letters · 1980 · 116 citations

Engineering, Materials Engineering, Materials Science +17