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Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Electrical EngineeringUltrathin Gate OxidesEngineeringNanoelectronicsStress-induced Leakage CurrentBias Temperature InstabilityApplied PhysicsTime-dependent Dielectric BreakdownFailure MechanismDevice ReliabilityMicroelectronicsConstant-voltage-stress BreakdownsSemiconductor Device