Generation of terahertz radiation by bulk and surface optical rectification from crystal planes of arbitrary orientation

Abstract

The theory of second-order nonlinear bulk and third-order nonlinear surface electric-field-induced optical rectification is developed for zinc-blende $\overline{4}3m$ crystal faces of arbitrary indices $(hkl)$. The theory is then used to account for our experimental results for terahertz generation from GaAs high-index planes $(11N)A$ and $(11N)B$, where $N=2$, 3, 4, and 5. The data combined with the calculations allow us to demonstrate that a surface field is present on both the Ga-rich and As-rich faces and to determine that the signs are opposite and that the strengths are similar. Such conclusions are inaccessible by work restricted to low-index planes.