Concepedia

The growth of N-face GaN by MOCVD: effect of Mg, Si, and In

P. R. Tavernier, Tal Margalith, Jesse Williams, D.S Green, S. Keller, Steven P. DenBaars, Umesh K. Mishra, Shuji Nakamura, David R. Clarke

Journal of Crystal Growth · 2004 · 36 citations · 12 references

DOI

Concepts

References

12

Theory of doping and defects in III–V nitrides

Journal of Crystal Growth · 1998 · 207 citations · Full text

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Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran, R. M. Feenstra, Wendy L. Sarney et al. · Applied Physics Letters · 1999 · 205 citations

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Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

M. Seelmann‐Eggebert, J.L. Weyher, H. Obloh et al. · Applied Physics Letters · 1997 · 185 citations

, , +17

Theory of doping and defects in III-V nitrides

1998 · 162 citations

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Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

O. Ambacher, R. Dimitrov, M. Stutzmann et al. · physica status solidi (b) · 1999 · 143 citations

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