The growth of N-face GaN by MOCVD: effect of Mg, Si, and In - Concepedia

Concepedia

Publication | Closed Access

The growth of N-face GaN by MOCVD: effect of Mg, Si, and In

36

Citations

11

References

2004

Year

P. R. Tavernier, Tal Margalith, Jesse Williams, D.S Green, S. Keller, Steven P. DenBaars, Umesh K. Mishra, Shuji Nakamura, David R. Clarke

Journal of Crystal Growth

Materials EngineeringMaterials ScienceElectrical EngineeringN-face GanEngineeringWide-bandgap SemiconductorApplied PhysicsGan Power DeviceGallium OxideCategoryiii-v SemiconductorOptoelectronics

References

	Year	Citations

Page 1

Page 1