Applied Physics Letters · 2005 · 46 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesQuantum Well DevicesQuantum WellsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor LasersConduction BandCurrent DensityDiode Laser Threshold CurrentElectronic ConductionHigh-power LasersQuantum Well LasersSemiconductor Laser DiodesTransition Regions
A type-II “W” diode laser with five quantum well periods and emitting at λ≈3.5μm operated in cw mode to T=218K. A second device produced more than 500mW of cw power at 80K. The threshold current density at T=78K was 31A∕cm2, and pulsed operation was observed to 317K. Improvements over previous single-stage devices for this wavelength range may be attributed in part to high growth quality and also to the incorporation of transition regions that smooth discontinuities in the conduction-band profile.
17
Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature
Mattias Beck, Daniel Hofstetter, T. Aellen et al. · Science · 2002 · 779 citations
Type-II quantum-well lasers for the mid-wavelength infrared
J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al. · Applied Physics Letters · 1995 · 428 citations