Applied Physics Letters · 1999 · 96 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLaser DiodesLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsRadiative Heat TransferSemiconductor LasersDiamond Semiconductor DevicesDiamond SemiconductorsHigh-power Semiconductor LasersHigh-temperature Infrared MaterialsMaximum Power OutputMid-infrared EmissionPumpingThermal Management In Semiconductor Lasers
Optically pumped type-II W lasers emitting in the mid-infrared exhibited continuous-wave (cw) operating temperatures of 290 K at λ=3.0 μm and 210 K at λ=6.1 μm. Maximum cw output powers for 78 K were 260 mW at λ=3.1 μm and nearly 50 mW at λ=5.4 μm. These high maximum temperatures were achieved through the use of a diamond-pressure-bonding technique for heat sinking the semiconductor lasers. The thermal bond, which is accomplished through pressure alone, permits topside optical pumping through the diamond at wavelengths that would be absorbed by the substrate.
10
Type-II quantum-well lasers for the mid-wavelength infrared
J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al. · Applied Physics Letters · 1995 · 428 citations
Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
J. R. Meyer, C. L. Felix, W. W. Bewley et al. · Applied Physics Letters · 1998 · 135 citations