Publication | Closed Access
High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking
96
Citations
10
References
1999
Year
Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser MaterialThermal RadiationHigh-power LasersType-ii W LasersSemiconductor LasersOptical PropertiesOptical PumpingPhotonicsPhotoluminescenceLaser Processing TechnologyLaser DesignDiamond-pressure-bond Heat SinkingLaser ClassificationAdvanced Laser ProcessingApplied PhysicsGas LasersHigh-energy LasersOptoelectronicsThermal Bond
Optically pumped type-II W lasers emitting in the mid-infrared exhibited continuous-wave (cw) operating temperatures of 290 K at λ=3.0 μm and 210 K at λ=6.1 μm. Maximum cw output powers for 78 K were 260 mW at λ=3.1 μm and nearly 50 mW at λ=5.4 μm. These high maximum temperatures were achieved through the use of a diamond-pressure-bonding technique for heat sinking the semiconductor lasers. The thermal bond, which is accomplished through pressure alone, permits topside optical pumping through the diamond at wavelengths that would be absorbed by the substrate.
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