M. Grau - Concepedia

Author

M. Grau

Schott (Germany)

Also Known As

Grau, M., M Grau, M. Grau, Marion Grau

Publications

513

Citations

H-Index

Concepts

All Affiliations

Schott (Germany)Technical University of Munich Vertilas (Germany)

About

M. Grau is an author at Schott (Germany) specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	378
2	Applied Physics	7	7	378
3	Physics	4	4	196
4	Electrical Engineering	2	2	51
5	Materials Science	2	2	144

M. Grau

Publications

450

Citations

H-Index

Page 1

	Year	Citations
Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers Chien‐Hung Lin, M. Grau, O. Dier, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material	2004	150
Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers M. Grau, Chien‐Hung Lin, O. Dier, Applied Physics Letters Wide-bandgap SemiconductorAlgainassb BarriersOptical MaterialsEngineeringLaser Science	2005	134
Electrically pumped room temperature CW VCSELs with 2.3 µm emission wavelength M. Ortsiefer, G. Böhm, M. Grau, Electronics Letters	2006	50
Electrically pumped room temperature CW VCSELs with 2.3 /spl mu/m emission wavelength M. Ortsiefer, G. Böhm, M. Grau, Electronics Letters Continuous WavePhotonicsElectrical EngineeringRoom TemperatureMaximum Cw	2006	41
2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy G.K. Kuang, G. Böhm, M. Grau, Applied Physics Letters PhotonicsRoom TemperatureEngineeringLaser ScienceSemiconductor Lasers	2000	22
Low threshold 2.72 µm GaInAsSb/ AlGaAsSb multiple-quantum-well laser M. Grau, Chun-Yu Lin, Markus‐Christian Amann Electronics Letters	2002	22
Room-Temperature 2.81-&gt;tex&lt;$muhboxm$&gt;/tex&lt;Continuous-Wave Operation of GaInAsSb–AlGaAsSb Laser M. Grau, Chun-Yu Lin, M.-C. Amann IEEE Photonics Technology Letters Gainassb–algaassb LaserPhotonicsRidge Waveguide LasersEngineeringPhysics	2004	11
InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range M. Ortsiefer, M. Grau, R. Shau, PhotonicsElectrical EngineeringOptical MaterialsBuried Tunnel JunctionEngineering	2006	10
Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, Applied Physics Letters SemiconductorsMaterials ScienceGasb/gaas Quantum WellsEngineeringCrystalline Defects	2003	10

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