2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

Abstract

We have fabricated InGaAs–InGaAlAs–InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm2 at room temperature and a characteristic temperature of 48 K have been achieved.