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Type-II quantum-well lasers for the mid-wavelength infrared

423

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0

References

1995

Year

Abstract

We discuss an improved mid-wave infrared diode laser structure based on InAs-Ga1−xInxSb- InAs-Ga1−xAlxSb Type-II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement.