Defects in GaAs after Si indiffusion and annealing: A TEM and CL study

Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

Simon M. Sze, J.C. Irvin · Solid-State Electronics · 1968 · 685 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures

D.G. Deppe, N. Holonyak · Journal of Applied Physics · 1988 · 511 citations

Engineering, Crystal Self-diffusion, Optoelectronic Devices +16

Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs

G. A. Baraff, M. Schlüter · Physical Review Letters · 1985 · 495 citations

Semiconductors, -Site Point Defects, Reaction Energies +13

Dopant and defect energetics: Si in GaAs

John E. Northrup, Shengbai Zhang · Physical review. B, Condensed matter · 1993 · 291 citations

Semiconductors, Electrical Engineering, Engineering +13

Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

Mark E. Greiner, J. F. Gibbons · Applied Physics Letters · 1984 · 191 citations

Materials Engineering, Materials Science, Rapid Diffusion +14