H.-G. Hettwer

Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces

W. Jäger, A. Rucki, K. Urban et al. · Journal of Applied Physics · 1993 · 42 citations

Materials Science, Ii-vi Semiconductor, Engineering +15

Use of zinc diffusion into GaAs for determining properties of gallium interstitials

G. Bösker, N. A. Stolwijk, H.-G. Hettwer et al. · Physical review. B, Condensed matter · 1995 · 38 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +17

Evidence of point defect supersaturation during Zn diffusion in InP single crystals

D. Wittorf, A. Rucki, W. Jäger et al. · Journal of Applied Physics · 1995 · 16 citations

Materials Science, Ii-vi Semiconductor, Dislocation Loop Formation +15

Defects in GaAs after Si indiffusion and annealing: A TEM and CL study

L. F. Herzog, Ulrich Egger, Otwin Breitenstein et al. · Materials Science and Engineering B · 1995 · 11 citations

Electrical Engineering, Engineering, Applied Physics +8

Combined application of spreading-resistance and electron-microprobe depth profiling on GaAs:Zn and Si:P

H.-G. Hettwer, W. Lerch, B. Lentfort et al. · Applied Surface Science · 1991 · 11 citations

Electrical Engineering, Engineering, Physics +8