Applied Physics Letters · 1988 · 53 citations · 12 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsQuantum OptoelectronicsQuantum Well DevicesQuantum WellsSemiconductor InterfacesChemical DiffusionDiffusion In HeterostructuresLattice MismatchLattice Mismatch EffectsQuantum Well HeterostructuresQuantum Well StructuresSecondary Ion Mass Spectrometry
The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
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Disorder of an AlAs-GaAs superlattice by impurity diffusion
W. D. Laidig, N. Holonyak, M. D. Camras et al. · Applied Physics Letters · 1981 · 599 citations
Chemical beam epitaxy of InP and GaAs
W. T. Tsang · Applied Physics Letters · 1984 · 255 citations